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an AMP comoanv
Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
4W
PH1819-4N
v2.00
,975 .`24 77, i
.
Absolute Maximum Ratings at 25C
Parameter Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance Symbol Vcm VCES VES0 `c PO TJ TST0 eJC Rating
60
60
Units V V V 1 A W "C "C
"C/W
UN-ESS OTHERWlSE ND-ED, TOLERANZES ARE :M1, L,HETERS i. J _ ,253~.DlO , c&43*.25) .0045? OOl:,
3.0 0.7
I;;;;:;;) +'
1;
; I
'
1 I
--A-; ,110 :2.79> t
19.5 200 -55 to +150
7.5
,
INCt-3 t COY
=,13MM)
Electrical Characteristics
Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss Load MismatchTolerance 3rd Order IMD
at 25C
Symbol BV,,, ICES BVcEo BV,,, hFE GP
%
Min 60
Max 2.0
Units V mA V V
I,=5 mA
Test Conditions
V,,=24 V
I,=5 mA
20 3.0
15
120
1,=2.5 mA V,,=5 V, I,=O.l A V,:=26 V, I,,-,=20mA, PO,,.=4W PEP, F=1850 MHz, AF=lOO kHz V&6 V, l,c=20 mA, Po,,r=4 W PEP, F=1850 MHz, AF=lOO kHz W PEP, Ft1850 MHz, AF=lOO kHz
10
25
-
dB
%
RL VSWR-T IMD,
10 -
1O:l
-30
dB dBc
V,,t26 V, I,,=20 mA, Poe4
V,,=26 V, l,c=20 mA, POUT=4 PEP, F=1850 MHz, AF=l 00 kHz W V,,=26 V, I,,=20 mA, PO,=4 W PEP, F=1850 MHz, AF=~ 00 kHz
Typical Optimum Device Impedances
I
I
F(MHz) 1780 1850 1900 I
q(Q) 3.5+i9.3 3.1 + j9.2
3.3 + jS.9
LAO(Q) I
3.5+j5.6 4.5 + j5.2 4.8 + j5.5 (
Wireless Bipolar Power Transistor,
4W
PH1819-4N
v2.00
RF Test Fixture
"CC Q
GD ?
OUTPUT 50 OHMS
ARTWORK t=tQR-i-S Cl c2 c4 c5 CR1 Ll Rl RLl Ql c3
DIMENSIONS i-IS-!-
IN
MILS
BOARD TYPE:
33 pF ATC SIZE A 5000 pF CHIP 50 UF 50 VOLTS lN4245 DIODE 5 TURNS OF NO, 20 407 OHMS l/4 WATT 7 TURNS CIF Nil, 24 PH1819-4N ROGERS 6010,S ,025"
AWG AWG THICK,
ON ,160"
DIA
WATT
ON 3 OHM l/4 ER =
10.5
Wireless Bipolar Power Transistor, 4W
PHI 819-4N
v2.00
Typical Broadband Performance
Curves
GAIN-EFFICIENCY
P,,,=4.0 W PEP V&6
vs FREQUENCY
V I,,=20 mA
OUTPUT
I,,=20
POWER vs COLLECTOR
mA F1=1850.0
VOLTAGE
MHz F2~1850.1 MHz
6
Efficiency P,,=O.l w
1780
1850
1900
12
34
16
18
20
22
24
26
FREOUENCY
(MHz)
COLLECTOR
VOLTAGE
(V)
GAIN vs P
F1=1850.0 MHz F2=f%O.
,I
IMD vs PoUT
1 MHz V,,=26 -15 V I,,=50 mA Fld850.0
Class A6
MHz F2=1850.1
MHz
1.8
I,=300
14 .
mA. 22.0 V
-30 . a
3rd 0.9
I
% 27 E
Y 23 27
-60 L
-0 27 31 35 39
31 Pour (dBm)
35
3s
23
P&PEP)
in dBm
IMD vs P,,
V,,=26
-15
IMD vs POUT
MHz F2=1850.1 MHz
1.8 Vc,=22 I V Ico=300mA F1=1850.0
Class A
V I,,=20
mA Fl rl850.0
class As
MHz F2=1850.1
MHz 0.9
0.6 K % 0.3
23
27 P&PEP)
31 in dBm
35
39
23
27
31
35
39
P,,(PEP)
in dBm

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